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ARF1500
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ARF1500
BeO 1525-xx
RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE * Specified 125 Volt, 27.12 MHz Characteristics: * Output Power = 750 Watts. * Gain = 17dB (Class C) * Efficiency > 75%
MAXIMUM RATINGS
Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Device Dissipation @ TC = 25C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
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125V
750W
40MHz
The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
* High Performance Power RF Package. * Very High Breakdown for Improved Ruggedness. * Low Thermal Resistance. * Nitride Passivated Die for Improved Reliability.
All Ratings: TC = 25C unless otherwise specified.
ARF1500 UNIT Volts Amps Volts Watts C
500 60 30 1500 -55 to 200 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS VDS(ON) IDSS IGSS g fs V isolation VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Voltage
1
MIN
TYP
MAX
UNIT Volts A nA mhos Volts
500 6 7.5 100 1000 400 6 2500 3 5 7.5
(ID(ON) = 30A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 30A) RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) Gate Threshold Voltage (VDS = VGS, ID = 50mA)
Volts
THERMAL CHARACTERISTICS
Symbol RJC RCS Characteristic (per package unless otherwise noted) Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX UNIT
9-2005 050-5965 Rev C
0.12 0.09
C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 150V f = 1 MHz VGS = 15V VDD = 250 ID = 60A @ 25C RG = 1.6 MIN TYP MAX
ARF1500
UNIT
5150 500 215 7.5 6.0 20 10
6030 650 225
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol GPS Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 27.12 MHz VGS = 0V VDD = 125V MIN TYP MAX UNIT dB %
17 70
19 75
Pout = 750W
No Degradation in Output Power
1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%. APT Reserves the right to change, without notice, the specifications and information contained herein.
Per transistor section unless otherwise specified.
20,000 10,000 5000
CAPACITANCE (pf)
Ciss
1000 500
Coss Crss
100 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Capacitance vs. Drain-to-Source Voltage
60
ID, DRAIN CURRENT (AMPERES)
240
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
DATA FOR BOTH SIDES IN PARALLEL
ID, DRAIN CURRENT (AMPERES)
50 40 30 20 10 0
100 50
OPERATION HERE LIMITED BY RDS (ON)
TJ = -55C
100us
9-2005
10 5 TC =+25C TJ =+200C SINGLE PULSE 1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Maximum Safe Operating Area
1ms
050-5965 Rev C
TJ = +25C TJ = +125C 0 2 4 6 8 10 12 14 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics
10ms 100ms
1.15
ID, DRAIN CURRENT (AMPERES)
6 5 4 3 2 1 0 10.2V
ARF1500
1.10
VGS(th), THRESHOLD VOLTAGE (NORMALIZED)
1.05 1.00 0.95 0.90 0.85 0.80 0.75 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 4, Typical Threshold Voltage vs Temperature
8.2V 6.2V 4.2V 2.2V 2V 0 5 10 15 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5, Typical Output Characteristics
0.14
, THERMAL IMPEDANCE (C/W)
0.12 0.10
D = 0.9
0.7 0.08 0.06 0.04 0.02 0 0.5 Note:
PDM t1 t2
0.3 SINGLE PULSE 0.1 0.05 10-5 10-4
JC
Z
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 6, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
1.0
Table 1 - Typical Class AB Large Signal Impedance -- ARF1500 F (MHz) 2.0 13.5 27 40 Zin () 6.7-j 12 0.45 -j 2.5 0.22 -j 0.67 0.2 + j .19 ZOL () 7.5 -j 0.8 7.1 -j 1.7 6.1 -j 3.0 5.0 -j 3.6 Zin - Gate shunted with 25 IDQ = 100mA ZOL - Conjugate of optimum load for 750 Watts output at Vdd = 125V
Clamp
1.065 .250
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Thermal Considerations and Package Mounting: The rated 1500W power dissipation is only available when the package mounting surface is at 25C and the junction temperature is 200C. The thermal resistance between junctions and case mounting surface is 0.12 C/W. When installed, an additional thermal impedance of 0.1C/W between the package base and the mounting surface is typical. Insure that the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. The package is designed to be clamped to a heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the device and the heat sink. A simple clamp, and two 6-32 (M3.5) screws can provide the minimum 125 lb required mounting force. T = 12 in-lb.
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.500
Heat Sink
ARF15-BeO 1525-xx
1.065
.045
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.500
.005 .207 .375 .105 typ. .207
HAZARDOUS MATERIAL WARNING
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050-5965 Rev C
The ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area . These devices must never be thrown away with general industrial or domestic waste.
9-2005
C7
C9 L4
L5
C8 C10
+ 125V Output
RF Input
L1
L2
L3 TL1
C4 C5 C11
R1 C1 C2 C3
ARF1500 27.12 MHz Test Circuit
C1,C11 ARCO 465 50-450pF mica trimmer C2 1500pF ATC 700B C3 2x 3300 pF ATC 700B C4 8200pF 500V NPO ceramic C5 150pF 500V NPO C7-C8 .1uF 250V ceramic chip C9- C10 1000pF Z5U 500V L1 120 nH 5t #20 .25"d .3"l L2 20 nH #20 hairpin loop .3" x .125" L3 175 nH - 4t #10 .625" dia .875" l L4 2uH - 22t #24 enam. .312" dia. L5 500nH 2t on 850u .5" bead R1 51 .5W TL1 .25" x 1.75" (30 ) Stripline
27 MHz Test Amp ARF1500
BeO
ARF1500
135-05
J1
J2
RF 3-02
Parts placement
27 MHz Test Amp ARF1500
050-5965 Rev C
9-2005
RF 3-02
1:1 pcb artwork

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